d d ata sheet product specification october 1997 discrete semiconductors bt148 series thyristors logic level
nxp semiconductors product specification thyristors bt148 series logic level general description quick reference data glass passivated, sensitive gate symbol parameter max. max. max. unit thyristors in a plastic envelope, intended for use in general purpose bt148- 400r 500r 600r switching and phase control v drm , repetitive peak off-state 400 500 600 v applications. these devices are v rrm voltages intended to be interfaced directly to i t(av) average on-state current 2.5 2.5 2.5 a microcontrollers, logic integrated i t(rms) rms on-state current 4 4 4 a circuits and other low power gate i tsm non-repetitive peak on-state 35 35 35 a trigger circuits. current pinning - sot82 pin configuration symbol pin description 1 cathode 2 anode 3 gate tab anode limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -400r -500r -600r v drm , v rrm repetitive peak off-state - 400 1 500 1 600 1 v voltages i t(av) average on-state current half sine wave; t mb 113 ?c - 2.5 a i t(rms) rms on-state current all conduction angles - 4 a i tsm non-repetitive peak half sine wave; t j = 25 ?c prior to on-state current surge t = 10 ms - 35 a t = 8.3 ms - 38 a i 2 ti 2 t for fusing t = 10 ms - 6.1 a 2 s di t /dt repetitive rate of rise of i tm = 10 a; i g = 50 ma; - 50 a/s on-state current after di g /dt = 50 ma/s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v v rgm peak reverse gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 2 ?c temperature ak g 1 23 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ s. 2 note: operation above 110?c may require the use of a gate to cathode resistor of 1k or less. october 1997 1 rev 1.300
semiconductors product specification thyristors bt148 series logic level thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance - - 2.5 k/w junction to mounting base r th j-a thermal resistance in free air - 95 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 15 200 a i l latching current v d = 12 v; i gt = 0.1 a - 0.17 10 ma i h holding current v d = 12 v; i gt = 0.1 a - 0.10 6 ma v t on-state voltage i t = 5 a - 1.23 1.8 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.4 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 110 ?c 0.1 0.2 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; - 50 - v/ s off-state voltage exponential waveform; r gk = 100 t gt gate controlled turn-on i tm = 10 a; v d = v drm(max) ; i g = 5 ma; - 2 - s time di g /dt = 0.2 a/s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; i tm = 8 a; - 100 - s turn-off time v r = 10 v; di tm /dt = 10 a/s; dv d /dt = 2 v/s; r gk = 1 k october 1997 2 rev 1.300
semiconductors product specification thyristors bt148 series logic level fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 113?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 a = 1.57 1.9 2.2 2.8 4 bt148 if(av) / a ptot / w tmb(max) / c 125 122.5 120 117.5 115 112.5 110 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a 1 1000 0 10 20 30 40 10 100 number of half cycles at 50hz itsm / a t i tsm time i t tj initial = 25 c max 10 100 1000 bt148 itsm / a 10us 100us 1ms 10ms t / s time t tj initial = 25 c max t i i tsm di /dt limit t 0.01 0.1 1 10 0 2 4 6 8 10 12 bt150 surge duration / s it(rms) / a -50 0 50 100 150 0 1 2 3 4 5 bt148 tmb / c it(rms) / a 113 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt151 tj / c vgt(tj) vgt(25 c) october 1997 3 rev 1.300
semiconductors product specification thyristors bt148 series logic level fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt148 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 typ bt148 vt / v it / a max tj = 125 c tj = 25 c vo = 1.26 v rs = 0.099 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 bt148 tp / s zth j-mb (k/w) t p p t d -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt145 tj / c ih(tj) ih(25 c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) rgk = 100 ohms october 1997 4 rev 1.300
semiconductors product specification thyristors bt148 series logic level mechanical data dimensions in mm net mass: 0.8 g fig.13. sot82; pin 2 connected to mounting base. notes 1. refer to mounting instructions for sot82 envelopes. 2. epoxy meets ul94 v0 at 1/8". 4.58 2.54 max 1) 1.2 2.8 2.3 3.1 2.5 1 23 0.88 max 2.29 15.3 min 11.1 max 3.75 7.8 max 1) lead dimensions within this zone uncontrolled. 0.5 mounting base october 1997 5 rev 1.300
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